Local Thermal and Current Imaging in Power Devices
نویسنده
چکیده
This paper summarizes recent results obtained at TU Vienna in the field of thermal and free-carrier mapping of semiconductor devices using backside transient interferometric mapping (TIM) technique. The technique is based on measuring optical phase changes due to temperature and free carrier induced variations in semiconductor refractive index. Scanning transient heterodyne and 2D holographic interferometers are used for phase measurements. Thermal distribution, hot spot dynamics, current filament movement, and failure mechanisms are investigated in electrostatic discharge (ESD) protection devices and power vertical DMOS transistors.
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